Hall Effect Sensor

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Product Details:

Hall Effect Sensors consist basically of a thin piece of rectangular p-type semiconductor material such as gallium arsenide (GaAs), indium antimonide (InSb) or indium arsenide (InAs) passing a continuous current through itself.
When the device is placed within a magnetic field, the magnetic flux lines exert a force on the semiconductor material which deflects the charge carriers, electrons and holes, to either side of the semiconductor slab. This movement of charge carriers is a result of the magnetic force they experience passing through the semiconductor material.
As these electrons and holes move side wards a potential difference is produced between the two sides of the semiconductor material by the build-up of these charge carriers. Then the movement of electrons through the semiconductor material is affected by the presence of an external magnetic field which is at right angles to it and this effect is greater in a flat rectangular shaped material.